Zhouchangwan Yu

Electronic synapses made of layered two-dimensional materials

Yuanyuan Shi, Xianhu Liang, Bin Yuan et al. · Nature Electronics · 2018 · 636 citations

Natural Sciences, Materials Engineering, Materials Science +14

Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length

Gregory Pitner, Zichen Zhang, Qing Lin et al. · 2020 · 34 citations

Engineering, Electrical Engineering, Materials Science +17

High-Peformance BEOL-Compatible Atomic-Layer-Deposited In₂O₃ Fe-FETs Enabled by Channel Length Scaling down to 7 nm: Achieving Performance Enhancement with Large Memory Window of 2.2 V, Long Retention > 10 years and High Endurance > 10⁸ Cycles

Zehao Lin, Yuan-Chun Luo, Xiao Lyu et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 32 citations

Natural Sciences, Electrical Engineering, Materials Science +15

Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf_0.5Zr_0.5O₂ Thin Film Capacitors

Balreen Saini, Fei Huang, Yoon‐Young Choi et al. · Advanced Electronic Materials · 2023 · 28 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +16

Enhanced Switching Reliability of Hf_0.5Zr_0.5O₂ Ferroelectric Films Induced by Interface Engineering

Fei Huang, Balreen Saini, Zhouchangwan Yu et al. · ACS Applied Materials & Interfaces · 2023 · 18 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17