V. Portz

Quantitative description of photoexcited scanning tunneling spectroscopy and its application to the GaAs(110) surface

M. Schnedler, V. Portz, P. H. Weidlich et al. · Physical Review B · 2015 · 22 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Electron affinity and surface states of GaN <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>m</mml:mi></mml:math>-plane facets: Implication for electronic self-passivation

V. Portz, M. Schnedler, H. Eisele et al. · Physical review. B./Physical review. B · 2018 · 20 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Polarity-dependent pinning of a surface state

M. Schnedler, V. Portz, H. Eisele et al. · Physical Review B · 2015 · 18 citations

Natural Sciences, Materials Science, Physics +17

Correction of nonlinear lateral distortions of scanning probe microscopy images

M. Schnedler, P. H. Weidlich, V. Portz et al. · Ultramicroscopy · 2013 · 13 citations

Natural Sciences, Bioengineering, Biomedical Engineering +14

Intrinsic electronic properties of high-quality wurtzite InN

H. Eisele, Josephine Schuppang, M. Schnedler et al. · Physical review. B./Physical review. B · 2016 · 10 citations · Full text

Engineering, Materials Science, Physics +16