Toshiki Yasuda

Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures

Toshiki Yasuda, Kouta Yagi, Tomoyuki Suzuki et al. · Japanese Journal of Applied Physics · 2013 · 31 citations

Gan/algan Heterostructures, Piezoelectric Polarization Charges, Electrical Engineering +13

Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al_0.05Ga_0.95N

Toru Sugiyama, Daisuke Iida, Toshiki Yasuda et al. · Applied Physics Express · 2013 · 28 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +17

Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template

Toshiki Yasuda, Tetsuya Takeuchi, Motoaki Iwaya et al. · Applied Physics Express · 2017 · 26 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Electron and hole accumulations at GaN/AlInN/GaN interfaces and conductive n-type AlInN/GaN distributed Bragg reflectors

Shotaro Yoshida, Kazuki Ikeyama, Toshiki Yasuda et al. · Japanese Journal of Applied Physics · 2016 · 22 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Growths of AlInN Single Layers and Distributed Bragg Reflectors for VCSELs

Yugo Kozuka, Kazuki Ikeyama, Toshiki Yasuda et al. · MRS Proceedings · 2015 · 22 citations

Photonics, Optical Materials, Engineering +9