Benjamin L. Amey

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Active since

2011

Affiliations

Texas Instruments (United States)(Current)

The University of Texas at Arlington

Benjamin L. Amey is an author at Texas Instruments (United States) specializing in noise in semiconductor devices, electrical engineering, and semiconductor devices.

Publications per year

2011–2012

Publications

Effect of Stress-Induced Degradation in LDMOS $\hbox{1}/f$ Noise Characteristics

Md. Iqbal Mahmud, P. H. Hao, P. Srinivasan et al. · IEEE Electron Device Letters · 2011 · 20 citations

Engineering, Electrical Engineering, Microelectronics +16

A Physics-Based Analytical $\hbox{1}/f$ Noise Model for RESURF LDMOS Transistors

Md. Iqbal Mahmud, Zeynep Çelik‐Butler, Pinghai Hao et al. · IEEE Transactions on Electron Devices · 2012 · 11 citations

Engineering, Electrical Engineering, Microelectronics +16

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