Huang-Hsuan Lin

P-N double quantum well resonant interband tunneling diode with peak-to-valley current ratio of 144 at room temperature

Hann Huei Tsai Hann Huei Tsai, Ying Su, Huang-Hsuan Lin et al. · IEEE Electron Device Letters · 1994 · 57 citations

Semiconductors, Room Temperature, Electrical Engineering +13

Modeling of Short-Channel Effects in DG MOSFETs: Green’s Function Method Versus Scale Length Model

Nilesh Pandey, Huang-Hsuan Lin, Ashutosh Nandi et al. · IEEE Transactions on Electron Devices · 2018 · 28 citations

Device Modeling, Numerical Analysis, Electrical Engineering +11

Modeling of DG MOSFET <inline-formula> <tex-math notation="LaTeX">$I$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">$V$ </tex-math> </inline-formula> Characteristics in the Saturation Region

Yuan Taur, Huang-Hsuan Lin · IEEE Transactions on Electron Devices · 2018 · 21 citations

Device Modeling, Double-gate Mosfet Model, Electrical Engineering +12

Effect of Source–Drain Doping on Subthreshold Characteristics of Short-Channel DG MOSFETs

Huang-Hsuan Lin, Yuan Taur · IEEE Transactions on Electron Devices · 2017 · 20 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +12