Sebastian Blaeser

Strained Si and SiGe Nanowire Tunnel FETs for Logic and Analog Applications

Qing‐Tai Zhao, Simon Richter, C. Schulte‐Braucks et al. · IEEE Journal of the Electron Devices Society · 2015 · 85 citations · Full text

Engineering, Optoelectronic Devices, Integrated Circuits +16

Novel SiGe/Si line tunneling TFET with high Ion at low Vdd and constant SS

Sebastian Blaeser, S. Glass, C. Schulte‐Braucks et al. · 2015 · 58 citations

Device Modeling, Electrical Engineering, Engineering +15

Negative differential resistance in direct bandgap GeSn p-i-n structures

C. Schulte‐Braucks, Daniela Stange, Nils von den Driesch et al. · Applied Physics Letters · 2015 · 36 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

Line Tunneling Dominating Charge Transport in SiGe/Si Heterostructure TFETs

Sebastian Blaeser, S. Glass, C. Schulte‐Braucks et al. · IEEE Transactions on Electron Devices · 2016 · 22 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Silicon–germanium nanowire tunnel-FETs with homo- and heterostructure tunnel junctions

S. Richter, Sebastian Blaeser, Lars Knoll et al. · Solid-State Electronics · 2014 · 17 citations

Electrical Engineering, Engineering, Tunneling Microscopy +5