Novel SiGe/Si line tunneling TFET with high Ion at low Vdd and constant SS

Abstract

This paper presents a novel SiGe/Si tunneling field-effect transistor (TFET) which exploits line tunneling parallel with the gate electric field. The device makes use of selective and self-adjusted silicidation and a counter doped pocket within the SiGe layer at the source tunnel junction, resulting in a high on-current Ion = 6.7 μA/μm at a supply voltage VDD = −0.5 V and a constant subthreshold swing (SS) of about 80 mV/dec over four orders of magnitude of drain-current Id.