R. Bean

Molecular beam epitaxial growth and characterization of InSb on Si

Jen‐Inn Chyi, D. Biswas, S. Venkatakrishna Iyer et al. · Applied Physics Letters · 1989 · 88 citations

Insb Thickness, Engineering, Optoelectronic Devices +16

Influence of annealing and substrate orientation on metalorganic chemical vapor deposition GaAs on silicon heteroepitaxy

R. W. Kaliski, C. Ito, D. McIntyre et al. · Journal of Applied Physics · 1988 · 38 citations

Misoriented Silicon Substrates, Engineering, Integrated Circuits +21

Growth and transport properties of InAs epilayers on GaAs

Ş. Kalem, Jen-Inn Chyi, H. Morkoç̌ et al. · Applied Physics Letters · 1988 · 36 citations

Semiconductors, Materials Science, Dislocation Densities +14

HgCdTe photovoltaic detectors on Si substrates

Randolph R. Kay, R. Bean, K. Zanio et al. · Applied Physics Letters · 1987 · 35 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Materials +17

Epitaxial CdTe films on GaAs/Si and GaAs substrates

R. Bean, K. Zanio, Kenneth Hay et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1986 · 20 citations

Semiconductors, Materials Science, Electrical Engineering +14