Huaxing Jiang

1-kV Sputtered p-NiO/n-Ga₂O₃ Heterojunction Diodes With an Ultra-Low Leakage Current Below $1~\mu$ A/cm²

Xing Lü, Xianda Zhou, Huaxing Jiang et al. · IEEE Electron Device Letters · 2020 · 227 citations

Engineering, Electrical Engineering, Materials Science +17

Investigation of <italic>In Situ</italic> SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Huaxing Jiang, Chao Liu, Yuying Chen et al. · IEEE Transactions on Electron Devices · 2017 · 119 citations

Engineering, Electrical Engineering, Materials Science +17

Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiN_{<italic>x</italic>}as Gate Dielectric

Xing Lü, Kun Yu, Huaxing Jiang et al. · IEEE Transactions on Electron Devices · 2017 · 86 citations

Engineering, Electrical Engineering, Materials Science +17

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

Huaxing Jiang, Qifeng Lyu, Renqiang Zhu et al. · IEEE Transactions on Electron Devices · 2020 · 86 citations

Engineering, Electrical Engineering, Materials Science +15

High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si

Qifeng Lyu, Huaxing Jiang, Kei May Lau · Applied Physics Letters · 2020 · 77 citations

Engineering, Electrical Engineering, Materials Science +17