Concepedia

T. Shirahama

TS

Statistics

Publications

4

Citations

203

H-Index

4

Active since

1999

Affiliations

Tokushima University(Current)

T. Shirahama is an author at Tokushima University specializing in materials science, materials engineering, and semiconductor materials.

Publications per year

1999–2015

4

Publications

4

Electron mobility exceeding 104 cm2/V s in an AlGaN–GaN heterostructure grown on a sapphire substrate

T. Wang, Y. Ohno, M. Lachab et al. · Applied Physics Letters · 1999 · 68 citations · Full text

, , +17

Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures

T. Wang, Hisayuki Saeki, Jie Bai et al. · Applied Physics Letters · 2000 · 65 citations · Full text

, , +17

Influence of buffer layer and growth temperature on the properties of an undoped GaN layer grown on sapphire substrate by metalorganic chemical vapor deposition

T. Wang, T. Shirahama, Hong‐Bo Sun et al. · Applied Physics Letters · 2000 · 59 citations

, , +17

Comparison between AlGaN surfaces etched by carbon tetrafluoride and argon plasmas: Effect of the fluorine impurities incorporated in the surface

Retsuo Kawakami, Masahito Niibe, Yoshitaka Nakano et al. · Vacuum · 2015 · 11 citations

, , +17

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