Atsushi Narazaki

CSTBT™ based Split-Gate RC-IGBT with Low Loss and EMI Noise

Koichi Nishi, Atsushi Narazaki · 2020 · 29 citations

Low-power Electronics, Electrical Engineering, Engineering +14

A 0.35 μm trench gate MOSFET with an ultra low on state resistance and a high destruction immunity during the inductive switching

Atsushi Narazaki, Junya Maruyama, T. Kayumi et al. · 2002 · 23 citations

Trench Gate Width, Electrical Engineering, State Resistance +8

Next generation 650V CSTBT<sup>TM</sup> with improved SOA fabricated by an advanced thin wafer technology

Ryu Kamibaba, Kazuya Konishi, Yusuke Fukada et al. · 2015 · 20 citations

Semiconductors, Low-power Electronics, Electrical Engineering +13

Next generation 600V CSTBT™ with an advanced fine pattern and a thin wafer process technologies

Shigeto Honda, Yuki Haraguchi, Atsushi Narazaki et al. · 2012 · 18 citations

Electrical Engineering, Electronic Devices, Engineering +15

Experimental demonstration of the active trench layout tuned 1200V CSTBT™ for lower dV/dt surge and turn-on switching loss

Kazuya Konishi, Ryu Kamibaba, Mariko Umeyama et al. · 2016 · 18 citations

Electrical Engineering, Gate Capacitance, Engineering +15