Zhaozhao Hou

FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf_0.5Zr_0.5O₂

Zhaohao Zhang, Gaobo Xu, Qingzhu Zhang et al. · IEEE Electron Device Letters · 2019 · 80 citations

Engineering, Electrical Engineering, Materials Science +15

Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si_0.45Ge_0.55, Ge Gate-All-Around NSFET for 5 nm Technology Node

Jiaxin Yao, Huaxiang Yin, Jun Li et al. · IEEE Journal of the Electron Devices Society · 2018 · 68 citations · Full text

Engineering, Electrical Engineering, Physics +17

High drain field impact ionization transistors as ideal switches

Baowei Yuan, Zhibo Chen, Yingxin Chen et al. · Nature Communications · 2024 · 19 citations · Full text

Engineering, Electrical Engineering, Electronic Materials +13

The Effect of Thermal Treatment Induced Performance Improvement for Charge Trapping Memory with Al₂O₃/(HfO₂)_0.9(Al₂O₃)_0.1/Al₂O₃ Multilayer Structure

Zhaozhao Hou, Zhenhua Wu, Huaxiang Yin · ECS Journal of Solid State Science and Technology · 2018 · 17 citations

Engineering, Materials Engineering, Materials Science +15

Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High- <i>κ</i> Dielectrics and SiGe Epitaxial Substrates

Zhaozhao Hou, Guilei Wang, Jinjuan Xiang et al. · Chinese Physics Letters · 2017 · 14 citations

Engineering, Electrical Engineering, Materials Science +16