James Gallagher

Compositional dependence of the direct and indirect band gaps in Ge_1−<i>y</i>Sn_<i>y</i>alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and<i>n</i>-type materials

Liying Jiang, James Gallagher, Charutha Senaratne et al. · Semiconductor Science and Technology · 2014 · 107 citations

Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1−<i>y</i>Sn<i>y</i> alloys

James Gallagher, Charutha Senaratne, J. Kouvetakis et al. · Applied Physics Letters · 2014 · 93 citations · Full text

Optical Materials, Engineering, Spectroscopic Property +19

Electroluminescence from GeSn heterostructure <i>pin</i> diodes at the indirect to direct transition

James Gallagher, Charutha Senaratne, Patrick Sims et al. · Applied Physics Letters · 2015 · 57 citations · Full text

Materials Science, Semiconductor Technology, Electrical Engineering +14

Fundamental band gap and direct-indirect crossover in Ge_1-_<i>x-y</i>Si_<i>x</i>Sn_<i>y</i> alloys

James Gallagher, Chi Xu, Liying Jiang et al. · Applied Physics Letters · 2013 · 52 citations

Materials Science, Semiconductors, Optical Materials +13

Ge1-<i>y</i>Sn<i>y</i> (<i>y</i> = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

Charutha Senaratne, James Gallagher, Liying Jiang et al. · Journal of Applied Physics · 2014 · 45 citations · Full text

Optical Materials, Engineering, Novel Hydride Chemistries +18