Patrick Sims

Electroluminescence from GeSn heterostructure <i>pin</i> diodes at the indirect to direct transition

James Gallagher, Charutha Senaratne, Patrick Sims et al. · Applied Physics Letters · 2015 · 57 citations · Full text

Materials Science, Semiconductor Technology, Electrical Engineering +14

Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

Charutha Senaratne, P. Wallace, James Gallagher et al. · Journal of Applied Physics · 2016 · 44 citations

Snd4 Hydrides, Optical Materials, Engineering +21

Non-radiative recombination in Ge1−<i>y</i>Sn<i>y</i> light emitting diodes: The role of strain relaxation in tuned heterostructure designs

James Gallagher, Charutha Senaratne, Chi Xu et al. · Journal of Applied Physics · 2015 · 29 citations

Engineering, Optoelectronic Devices, Integrated Circuits +19

Ultralow Resistivity Ge:Sb heterostructures on Si Using Hydride Epitaxy of Deuterated Stibine and Trigermane

Chi Xu, Charutha Senaratne, Patrick Sims et al. · ACS Applied Materials & Interfaces · 2016 · 20 citations

High-temperature AlGaP/GaP solar cells for NASA space missions

O.V. Sulima, Patrick Sims, Jeffrey A. Cox et al. · 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of · 2003 · 14 citations

Materials Science, Semiconductors, Electrical Engineering +12