Statistics
Publications
6
Citations
225
H-Index
6
Active since
1987
R. Rahbi is an author at Laboratoire de physique des Solides specializing in materials science, semiconductor device materials, and semiconductor materials.
Publications per year
1987–1996
6
6
Experimental study of the hydrogen complexes in indium phosphide
R. Darwich, B. Pajot, B. Rose et al. · Physical review. B, Condensed matter · 1993 · 75 citations
Natural Sciences, Chemistry, Physics +17
Hydrogen diffusion and acceptor passivation in <i>p</i>-type GaAs
R. Rahbi, B. Pajot, J. Chevallier et al. · Journal of Applied Physics · 1993 · 47 citations
Thermal nitridation of p-type porous silicon in ammonia
V. Morazzani, J. L. Cantin, C. Ortega et al. · Thin Solid Films · 1996 · 35 citations
Modeling of hydrogen diffusion in p-type GaAs:Zn
R. Rahbi, D. Mathiot, J. Chevallier et al. · Physica B Condensed Matter · 1991 · 32 citations
Interactions Between Hydrogen and Silicon Acceptors in p-Type GaAs:Si
J. Chevallier, B. Pajot, Abdul Jalil et al. · MRS Proceedings · 1987 · 20 citations
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