Yohei Otani

Low-Temperature Formation of High-Quality $ \hbox{GeO}_{2}$ Interlayer for High-$\kappa$ Gate Dielectrics/Ge by Electron-Cyclotron-Resonance Plasma Techniques

Yukio Fukuda, Yuya Yazaki, Yohei Otani et al. · IEEE Transactions on Electron Devices · 2009 · 50 citations

Semiconductor Technology, Electron-cyclotron-resonance Plasma Oxidation, Engineering +14

Electro-Optic Properties of Lanthanum-Modified Lead Zirconate Titanate Thin Films Epitaxially Grown by the Advanced Sol–Gel Method

Kiyoshi Uchiyama, A. Kasamatsu, Yohei Otani et al. · Japanese Journal of Applied Physics · 2007 · 41 citations

Materials Science, Epitaxial Growth, Optical Materials +13

Influence of a TiO₂Adhesion Layer on the Structure and the Orientation of a Pt Layer in Pt/TiO₂/SiO₂/Si Structures

Norikazu Abe, Yohei Otani, Masato Miyake et al. · Japanese Journal of Applied Physics · 2003 · 32 citations

Engineering, Tio2 Layers, Anatase Tio2 +17

Fabrication of Ta2O5∕GeNx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques

Yohei Otani, Yasuhiro Itayama, Takuo Tanaka et al. · Applied Physics Letters · 2007 · 24 citations

Engineering, Ge Surface, Silicon On Insulator +19

Electrical Analyses of Germanium MIS Structure and Spectroscopic Measurement of the Interface Trap Density in an Insulator/Germanium Interface at Room Temperature

Yukio Fukuda, Yohei Otani, Yasuhiro Itayama et al. · IEEE Transactions on Electron Devices · 2007 · 20 citations

Insulator/germanium Interface, Engineering, Gate Bias +18