Wolfgang G. Scheibenzuber

Author

Fraunhofer Institute for Applied Solid State Physics

Also Known As

W. G. Scheibenzuber, W. Scheibenzuber, Wolfgang G. Scheibenzuber, Wolfgang Scheibenzuber

Publications

627

Citations

H-Index

Concepts

All Affiliations

Fraunhofer Institute for Applied Solid State Physics University of Freiburg École Polytechnique Fédérale de Lausanne OSRAM (Germany)University of Regensburg

About

Wolfgang G. Scheibenzuber is an author at Fraunhofer Institute for Applied Solid State Physics specializing in optoelectronics, engineering, and photonics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	473
2	Applied Physics	11	12	473
3	Physics	10	11	418
4	Electrical Engineering	7	7	229
5	Classical Optics	1	1	19

Wolfgang G. Scheibenzuber

Publications

570

Citations

H-Index

Page 1

	Year	Citations
Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes Wolfgang G. Scheibenzuber, Ulrich T. Schwarz, Ratko G. Veprek, Physical Review B Stark EffectPhotonicsQuantum SciencePolariton DynamicEngineering	2009	124
Recombination coefficients of GaN-based laser diodes Wolfgang G. Scheibenzuber, Ulrich T. Schwarz, Luca Sulmoni, Journal of Applied Physics SemiconductorsPhotonicsElectrical EngineeringWide-bandgap SemiconductorEngineering	2011	91
Waveguide design of green InGaN laser diodes Teresa Lermer, Marc Schillgalies, Andreas Breidenassel, physica status solidi (a) Wide-bandgap SemiconductorPhotonicsWaveguidesEngineeringSemiconductor Lasers	2010	55
Recent results of blue and green InGaN laser diodes for laser projection Stephan Lutgen, Dimitri Dini, Ines Pietzonka, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE	2011	42
Application of a composite plasmonic substrate for the suppression of an electromagnetic mode leakage in InGaN laser diodes P. Perlin, Katarzyna Holc, M. Sarzyński, Applied Physics Letters Wide-bandgap SemiconductorEngineeringLaser ApplicationsIngan Laser DiodesElectromagnetic Mode Leakage	2009	41
Gain of blue and cyan InGaN laser diodes Teresa Lermer, Alvaro Gomez‐Iglesias, M. Sabathil, Applied Physics Letters Wide-bandgap SemiconductorPhotonicsElectrical EngineeringEngineeringPhysics	2011	38
Unequal Pumping of Quantum Wells in GaN-Based Laser Diodes Wolfgang G. Scheibenzuber, Ulrich T. Schwarz Applied Physics Express	2012	24
Polarization switching of the optical gain in semipolar InGaN quantum wells Wolfgang G. Scheibenzuber, Ulrich T. Schwarz physica status solidi (b) Wide-bandgap SemiconductorCategoryquantum ElectronicsOptical GainEngineeringOptoelectronic Devices	2010	23
Antiguiding factor of GaN-based laser diodes from UV to green Wolfgang G. Scheibenzuber, Ulrich T. Schwarz, Teresa Lermer, Applied Physics Letters Optical MaterialsEngineeringLaser ApplicationsHigh-power LasersGan-based Laser Diodes	2010	23
Fast self-heating in GaN-based laser diodes Wolfgang G. Scheibenzuber, Ulrich T. Schwarz Applied Physics Letters Gan-based Laser DiodesPhotonicsElectrical EngineeringPulsed OperationEngineering	2011	20

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