physica status solidi (a) · 2010 · 55 citations · 11 references
EngineeringElectrical EngineeringPhysicsOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesOptical Properties Of SemiconductorsOptical WaveguidesSemiconductor Device MaterialsSemiconductor HeterostructuresWaveguidesBlue Light-emitting DiodesGallium Nitride (Gan) MaterialsGreen Laser DiodesGreen Light-emitting DiodesSemiconductor Laser DiodesWaveguide Design
Abstract In this paper we investigate the waveguiding (WG) of direct green InGaN laser diodes grown on c ‐plane GaN substrates. The problem of parasitic modes emerges due to the reduced refractive index difference between the GaN waveguide and AlGaN cladding layers for green compared to blue emitting laser diodes. We discuss several approaches to avoid substrate modes. We investigate different materials and designs for optimized WG of green InGaN laser diodes using a 1D transfer matrix simulation tool.
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InGaN laser diodes with 50 mW output power emitting at 515 nm
Adrian Avramescu, Teresa Lermer, Jens Müller et al. · Applied Physics Letters · 2009 · 120 citations