T. J. Ormsby

Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile

M. G. Dowsett, S. H. Al-Harthi, T. J. Ormsby et al. · Physical review. B, Condensed matter · 2002 · 67 citations

Earliest Stages, Engineering, Microscopy +28

The advantages of normal incidence ultra-low energy secondary ion mass spectrometry depth profiling

T. J. Ormsby, Daping Chu, M. G. Dowsett et al. · Applied Surface Science · 1999 · 24 citations

Analytical Instrumentation, Accelerator Mass Spectrometry, Clinical Mass Spectrometry +11

Ultralow energy secondary ion mass spectrometry and transient yields at the silicon surface

Mark Dowsett, T. J. Ormsby, G. A. Cooke et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1998 · 19 citations

Engineering, Microscopy, Native Oxide +21

On determining accurate positions, separations, and internal profiles for delta layers

M. G. Dowsett, Jonathan Howe Kelly, G. Rowlands et al. · Applied Surface Science · 2002 · 16 citations

Numerical Analysis, Geometric Modeling, Accurate Positions +10

Determination of the variation in sputter yield in the SIMS transient region using MEIS

M. G. Dowsett, T. J. Ormsby, F.S. Gard et al. · Applied Surface Science · 2002 · 11 citations

Sims Transient Region, Electrical Engineering, Engineering +3