Ju-Yuan Tzeng

Body-Tied Germanium Tri-Gate Junctionless PMOSFET With In-Situ Boron Doped Channel

Che-Wei Chen, Cheng-Ting Chung, Ju-Yuan Tzeng et al. · IEEE Electron Device Letters · 2014 · 18 citations

Engineering, Electrical Engineering, Microelectronics +12

High-Performance Germanium p- and n-MOSFETs With NiGe Source/Drain

Che-Wei Chen, Ju-Yuan Tzeng, Cheng-Ting Chung et al. · IEEE Transactions on Electron Devices · 2014 · 16 citations

Engineering, Electrical Engineering, Materials Science +16

Enhancing the Performance of Germanium Channel nMOSFET Using Phosphorus Dopant Segregation

Che-Wei Chen, Ju-Yuan Tzeng, Cheng-Ting Chung et al. · IEEE Electron Device Letters · 2014 · 14 citations

Engineering, Electrical Engineering, Materials Science +17

A 90 ns 100 K erase/program cycle megabit flash memory

V. Kynett, J. Anderson, G. Atwood et al. · 2003 · 13 citations

Engineering, Computer Engineering, Electrical Engineering +14

Germanium N and P Multifin Field-Effect Transistors With High-Performance Germanium (Ge) ${\rm p}^{+}/{\rm n}$ and ${\rm n}^{+}/{\rm p}$ Heterojunctions Formed on Si Substrate

Che-Wei Chen, Cheng-Ting Chung, Ju-Yuan Tzeng et al. · IEEE Transactions on Electron Devices · 2013 · 12 citations

Engineering, Electrical Engineering, Materials Science +16