Effect of low-intensity laser radiation during oxidation of the GaAs(110) surface

W Petro, Isao Hino, Stephen Eglash, +3

Journal of Vacuum Science and Technology

Laser RadiationEngineeringLaser PhysicsLaser ApplicationsLaser Material +15

Systematics of interfacial chemical reactions on InP(110)

T. Kendelewicz, W Petro, I. Lindau, +1

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Optical MaterialsEngineeringSurface NanotechnologyChemistryOverlayer Growth +15

Au-GaAs(110) interface: Photoemission studies of the effects of temperature

W Petro, T. Kendelewicz, I. Lindau, +1

Physical review. B, Condensed matter

SemiconductorsMaterials ScienceIi-vi SemiconductorPhotoemission StudiesEngineering +12

Experimental results examining various models of Schottky barrier formation on GaAs

W. E. Spicer, N. Newman, T. Kendelewicz, +4

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

SemiconductorsExperimental ResultsElectrical EngineeringSemiconductor TechnologyEngineering +11

Annealing of intimate Ag, Al, and Au–GaAs Schottky barriers

N. Newman, Ken K. Chin, W Petro, +4

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Materials EngineeringSemiconductorsElectrical EngineeringElectronic DevicesIntimate Ag +12

Schottky barrier formation and intermixing of noble metals on GaAs(110)

Shihui Pan, D. Mo, W Petro, +2

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Materials ScienceSemiconductorsIi-vi SemiconductorEngineeringPhysics +12

Optically enhanced low temperature oxygen chemisorption on GaAs(110)

K. A. Bertness, W Petro, J. A. Silberman, +2

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

SemiconductorsOptical MaterialsEngineeringPhotoluminescenceLaser Photochemistry +11

Photoemission studies of the effect of temperature on the Au–GaAs(110) interface

W Petro, I. A. Babalola, T. Kendelewicz, +2

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Optical MaterialsX-ray SpectroscopyEngineeringAu OverlayerSemiconductor Nanostructures +15

Fermi energy pinning behavior and chemical reactivity of the Pd/GaAs (110) interface

T. Kendelewicz, W Petro, Shihui Pan, +3

Applied Physics Letters

SemiconductorsMaterials ScienceWide-bandgap SemiconductorIi-vi SemiconductorEngineering +13

Annealing of intimate Au-GaAs Schottky barriers: Thick and ultrathin metal films

N. Newman, W Petro, T. Kendelewicz, +3

Journal of Applied Physics

EngineeringOptoelectronic DevicesSemiconductorsIi-vi SemiconductorElectronic Devices +14