D. Heslinga - Concepedia

Author

D. Heslinga

Also Known As

Cabal, R., Coquelle, E., D. Heslinga, D. R. Heslinga, D.R. HESLINGA, D.R. Heslinga, Dick Heslinga, Gall, S., Heslinga, D., Martel, B.

Publications

825

Citations

H-Index

Concepts

All Affiliations

University of Groningen Commissariat à l'Énergie Atomique et aux Énergies Alternatives Laboratoire d’Innovation pour les Technologies des Énergies Nouvelles et les nanomatériaux

About

D. Heslinga is an author at University of Groningen specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	668
2	Applied Physics	11	12	667
3	Electrical Engineering	7	7	243
4	Materials Science	5	5	370
5	Computer Engineering	1	1	16

D. Heslinga

Publications

683

Citations

H-Index

Page 1

	Year	Citations
Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfaces D. Heslinga, Hanno H. Weitering, D. P. van der Werf, Physical Review Letters Materials ScienceEngineeringPhysicsBarrier HeightNanoelectronics	1990	196
Structure and growth of epitaxial Pb on Si(111) Hanno H. Weitering, D. Heslinga, T. Hibma Physical review. B, Condensed matter Materials ScienceEpitaxial PbEngineeringPhysicsSurface Science	1992	113
Carrier transport in mesoscopic silicon-coupled superconducting junctions W. M. van Huffelen, T. M. Klapwijk, D. Heslinga, Physical review. B, Condensed matter Superconducting MaterialElectrical EngineeringEngineeringFinite VoltagesPhysics	1993	79
Enhancement of superconductivity far above the critical temperature in double-barrier tunnel junctions D. Heslinga, T. M. Klapwijk Physical review. B, Condensed matter Superconducting MaterialEngineeringDouble-barrier Tunnel JunctionsCritical CurrentsCritical Temperature	1993	64
Light-Induced-Degradation effects in boron–phosphorus compensated n-type Czochralski silicon T. Schutz-Kuchly, Jordi Veirman, Sébastien Dubois, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringLight-induced-degradation Effects	2010	59
Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation Jordi Veirman, Sébastien Dubois, N. Enjalbert, Solid-State Electronics EngineeringPhysicsApplied PhysicsCondensed Matter PhysicsSingle-crystalline Silicon	2010	41
Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy D. Heslinga, S. E. Shafranjuk, H. van Kempen, Physical review. B, Condensed matter EngineeringPoint-contact SpectroscopySi/nb InterfacesSilicon On InsulatorSemiconductor Device	1994	33
Electron transport in niobium-silicon-niobium structures D. Heslinga, W. M. van Huffelen, T. M. Klapwijk IEEE Transactions on Magnetics Superconducting MaterialElectrical EngineeringVoltage-carrying StateEngineeringPhysics	1991	23
Light‐induced degradation in compensated n‐type Czochralski silicon solar cells T. Schutz-Kuchly, Sébastien Dubois, Jordi Veirman, physica status solidi (a) Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesIngot Height	2010	17
Schottky barrier and contact resistance at a niobium/silicon interface D. Heslinga, T. M. Klapwijk Applied Physics Letters SemiconductorsWide Doping RangeElectrical EngineeringSemiconductor TechnologyEngineering	1989	16

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