Jordi Veirman

Light-Induced-Degradation effects in boron–phosphorus compensated n-type Czochralski silicon

T. Schutz-Kuchly, Jordi Veirman, Sébastien Dubois et al. · Applied Physics Letters · 2010 · 59 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation

Jordi Veirman, Sébastien Dubois, N. Enjalbert et al. · Solid-State Electronics · 2010 · 41 citations

Engineering, Physics, Applied Physics +8

Electronic properties of highly-doped and compensated solar-grade silicon wafers and solar cells

Jordi Veirman, Sébastien Dubois, N. Enjalbert et al. · Journal of Applied Physics · 2011 · 40 citations

Engineering, Semiconductor Materials, Photovoltaic Devices +19

Low temperature‐coefficient for solar cells processed from solar‐grade silicon purified by metallurgical route

Florent Tanay, Sébastien Dubois, N. Enjalbert et al. · Progress in Photovoltaics Research and Applications · 2011 · 37 citations

Low Temperature‐coefficient, Engineering, J Sc +17

Recombination activity associated with thermal donor generation in monocrystalline silicon and effect on the conversion efficiency of heterojunction solar cells

M. Tomassini, Jordi Veirman, Renaud Varache et al. · Journal of Applied Physics · 2016 · 34 citations

Engineering, Energy Conversion, Organic Solar Cell +21