Physical Review Letters · 1990 · 196 citations · 14 references
EngineeringMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor DevicesSemiconductor MaterialsMetal-semiconductor ContactsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSemiconductor Thin FilmsCarrier Tunneling Across InterfacesEpitaxial InterfacesLocal Electronic StructureLocal StructureMetal-semiconductor InterfacesSchottky Barrier CharacteristicsSchottky BarriersTunneling Barriers
The Schottky barrier of Pb grown epitaxially on n-type Si(111) has been studied. Two structures can be formed, which differ only in the arrangement of the first layer of Pb and Si atoms at the interface. One, a Si(111)(7\ifmmode\times\else\texttimes\fi{}7)-Pb structure, has a Schottky-barrier height of 0.70 eV. The other, a Si(111)(\ensuremath{\surd}3 \ifmmode\times\else\texttimes\fi{} \ensuremath{\surd}3 )R30\ifmmode^\circ\else\textdegree\fi{}-Pb structure, has a barrier height of 0.93 eV. These results emphasize the importance of the local electronic structure for Schottky-barrier formation at ordered interfaces.
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Schottky Barrier Heights and the Continuum of Gap States
J. Tersoff · Physical Review Letters · 1984 · 1.4K citations