Xiaoshi Jin

A unified analytical continuous current model applicable to accumulation mode (junctionless) and inversion mode MOSFETs with symmetric and asymmetric double-gate structures

Xiaoshi Jin, Xi Liu, Meile Wu et al. · Solid-State Electronics · 2012 · 59 citations

Device Modeling, Electrical Engineering, Semiconductor Device +8

A subthreshold current model for nanoscale short channel junctionless MOSFETs applicable to symmetric and asymmetric double-gate structure

Xiaoshi Jin, Xi Liu, Hyuck‐In Kwon et al. · Solid-State Electronics · 2013 · 48 citations

Device Modeling, Electrical Engineering, Engineering +7

Modelling of the nanoscale channel length effect on the subthreshold characteristics of junctionless field-effect transistors with a symmetric double-gate structure

Xiaoshi Jin, Xi Liu, Meile Wu et al. · Journal of Physics D Applied Physics · 2012 · 43 citations

Device Modeling, Jl Fets, Electrical Engineering +14

The Optimal Design of Junctionless Transistors with Double-Gate Structure for reducing the Effect of Band-to-Band Tunneling

Meile Wu, Xiaoshi Jin, Hyuck‐In Kwon et al. · JSTS Journal of Semiconductor Technology and Science · 2013 · 35 citations

Device Modeling, Double-gate Structure, Electrical Engineering +14

High-Gain Complementary Inverter Based on Corbino p-Type Tin Monoxide and n-Type Indium-Gallium-Zinc Oxide Thin-Film Transistors

Hyo‐Jun Joo, Mingyu Shin, Soo-Hun Kwon et al. · IEEE Electron Device Letters · 2019 · 29 citations

Electrical Engineering, Oxide Electronics, Corbino Structure Tfts +4