S. K. Sputz

Band nonparabolicities in lattice-mismatch-strained bulk semiconductor layers

R. People, S. K. Sputz · Physical review. B, Condensed matter · 1990 · 112 citations

Ii-vi Semiconductor, Analytic Expressions, Electrical Engineering +10

Properties of (Al,Ga)As/GaAs heterostructures grown by molecular beam epitaxy with growth interruption

C. W. Tu, Robert C. Miller, Barbara A. Wilson et al. · Journal of Crystal Growth · 1987 · 107 citations

Materials Science, Engineering, Growth Interruption +5

Photoluminescence studies of the effects of interruption during the growth of single GaAs/Al0.37Ga0.63As quantum wells

Robert C. Miller, C. W. Tu, S. K. Sputz et al. · Applied Physics Letters · 1986 · 85 citations

Wide-bandgap Semiconductor, Photonics, Single Wells +10

Broadband (8–14 μm), normal incidence, pseudomorphic Ge<i>x</i>Si1−<i>x</i>/Si strained-layer infrared photodetector operating between 20 and 77 K

R. People, J. C. Bean, C. G. Bethea et al. · Applied Physics Letters · 1992 · 73 citations · Full text

Engineering, Optoelectronic Devices, Integrated Circuits +16

Simulation and characterization of the selective area growth process

M. Afshar Alam, R. People, E. D. Isaacs et al. · Applied Physics Letters · 1999 · 48 citations

Process Design, Process Intensification, Engineering +13