Hyundeok Yang

Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

Sangmoo Choi, Hyundeok Yang, Man Chang et al. · Applied Physics Letters · 2005 · 58 citations

Non-volatile Memory, Engineering, Memory Characteristics +17

Electrical properties of Pt/n-type Ge Schottky contact with PEDOT:PSS interlayer

A. Ashok Kumar, V. Rajagopal Reddy, V. Janardhanam et al. · Journal of Alloys and Compounds · 2012 · 40 citations

Materials Science, Electrical Engineering, Pss Interlayer +9

Temperature Dependency of Schottky Barrier Parameters of Ti Schottky Contacts to Si-on-Insulator

I. Jyothi, Hyundeok Yang, Kyu-Hwan Shim et al. · MATERIALS TRANSACTIONS · 2013 · 39 citations · Full text

Engineering, Homogeneous Barrier Height, Schottky Barrier Parameters +16

Size-dependent charge storage in amorphous silicon quantum dots embedded in silicon nitride

Nae‐Man Park, Sanghun Jeon, Hyundeok Yang et al. · Applied Physics Letters · 2003 · 36 citations

Engineering, Semiconductor Physics, Semiconductor Materials +20

High density silicon nanocrystal embedded in sin prepared by low energy (>500eV) SiH/sub 4/ plasma immersion ion implantation for non-volatile memory applications

Sangmoo Choi, Hyejung Choi, Tae‐Wook Kim et al. · 2006 · 11 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +20