Siau Ben Chiah

Surface-Potential Solution for Generic Undoped MOSFETs With Two Gates

W. Z. Shangguan, Xing Zhou, K. Chandrasekaran et al. · IEEE Transactions on Electron Devices · 2007 · 39 citations

Device Modeling, Numerical Analysis, Electrical Engineering +13

A Compact Model Satisfying Gummel Symmetry in Higher Order Derivatives and Applicable to Asymmetric MOSFETs

Guan Huei See, Xing Zhou, K. Chandrasekaran et al. · IEEE Transactions on Electron Devices · 2008 · 39 citations

Device Modeling, Electrical Engineering, Engineering +14

A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge Effects

Binit Syamal, Xing Zhou, Siau Ben Chiah et al. · IEEE Transactions on Electron Devices · 2016 · 39 citations

Device Modeling, Electrical Engineering, Gan Hemts +14

Physics-Based Single-Piece Charge Model for Strained-Si MOSFETs

K. Chandrasekaran, Xiaoguo Zhou, Siau Ben Chiah et al. · IEEE Transactions on Electron Devices · 2005 · 21 citations

Device Modeling, Layer Thickness, Electrical Engineering +11

Effect of substrate doping on the capacitance-Voltage characteristics of strained-silicon pMOSFETs

K. Chandrasekaran, Xi, Siau Ben Chiah et al. · IEEE Electron Device Letters · 2005 · 20 citations

Device Modeling, Electrical Engineering, Semiconductor Device +11