N.J. Woods

Strained Si/SiGe n-channel MOSFETs: impact of cross-hatching on device performance

Sarah H. Olsen, Alexandra Neill, David J. Norris et al. · Semiconductor Science and Technology · 2002 · 36 citations

Electrical Engineering, Engineering, Strained Si +10

Conductivity of a two-dimensional electron gas in a Si/SiGe heterostructure near the metal-insulator transition: Role of the short- and long-range scattering potential

E. B. Olshanetsky, V. Renard, Z. D. Kvon et al. · Physical review. B, Condensed matter · 2003 · 33 citations · Full text

Modified GSMBE for higher growth rate and non-selective growth

N.J. Woods, G Breton, H. Graoui et al. · Journal of Crystal Growth · 2001 · 26 citations

Modified Gsmbe, Energy Efficiency, Yield Optimization +3

RHEED and SIMS studies of germanium segregation during growth of SiGe/Si heterostructures; a two-site exchange model with growth rate dependence

Eng Soon Tok, N.J. Woods, Junqiu Zhang · Journal of Crystal Growth · 2000 · 25 citations

Physics, Germanium Segregation, Applied Physics +6

Effect of metal–oxide–semiconductor processing on the surface roughness of strained Si/SiGe material

Sarah H. Olsen, A.G. O’Neill, S.J. Bull et al. · Journal of Applied Physics · 2002 · 18 citations

Atomic Force Microscopy, Engineering, Integrated Circuits +18