R.H. Walling

Planar-junction, top-illuminated GainAs/InP <i>pin</i> photodiode with bandwidth of 25 GHz

D. Wake, R.H. Walling, I.D. Henning et al. · Electronics Letters · 1989 · 37 citations

Engineering, Electrical Engineering, Materials Science +15

The role of MOVPE in the manufacture of high performance InP based optoelectronic devices

A.W. Nelson, P.C. Spurdens, Sandhya Cole et al. · Journal of Crystal Growth · 1988 · 34 citations

Engineering, Materials Engineering, Materials Science +14

Wide bandwidth multiple quantum well 1.55 μm lasers

I.F. Lealman, Micaela B. Bagley, D.M. Cooper et al. · Electronics Letters · 1991 · 23 citations

Engineering, Electrical Engineering, Materials Science +16

Top-illuminated InGaAs/InP p-i-n photodiodes with a 3-dB bandwidth in excess of 26 GHz

D. Wake, L.C. Blank, R.H. Walling et al. · IEEE Electron Device Letters · 1988 · 23 citations

Engineering, Electrical Engineering, Materials Science +17

Low threshold channelled-substrate buried crescent InGaAsP lasers emitting at 1.54 μm

William J. Devlin, R.H. Walling, P.J. Fiddyment et al. · Electronics Letters · 1981 · 16 citations

Engineering, Electrical Engineering, Materials Science +17