Electronics Letters · 1989 · 37 citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesDetector TechnologyHigh-frequency Semiconductor DevicesOptoelectronic DevicesPhotodetectorsPhotonic Integrated CircuitsSemiconductor DetectorsBandwidthBandwidth AnalysisIntegrated PhotodetectorsPhotodetector BandwidthPhotodiodesQuantum Efficiency
A top-illuminated GaInAs/InP pin photodiode has been produced in a planar-junction configuration, which combines high reliability (no change in dark current over 4700 h at 175°C) with the widest bandwidth (25 GHz), and highest quantum efficiency (80% at 1.55 μm), yet reported for this type of device.
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Measurement of hole velocity in <i>n</i>-type InGaAs
P. Hill, J. Schlafer, W. Powazinik et al. · Applied Physics Letters · 1987 · 78 citations
Engineering, Electrical Engineering, Electronic Materials +14