Concepedia

Nozomu Ueyama

NU

Statistics

Publications

6

Citations

279

H-Index

6

Active since

2016

Affiliations

The University of Tokyo(Current)

Nozomu Ueyama is an author at The University of Tokyo specializing in engineering, microelectronics, and electrical engineering.

Publications per year

2016–2018

6

Publications

6

Negative Capacitance for Boosting Tunnel FET performance

Masaharu Kobayashi, Kyungmin Jang, Nozomu Ueyama et al. · IEEE Transactions on Nanotechnology · 2017 · 118 citations

Engineering, Electrical Engineering, Materials Science +17

Experimental study on polarization-limited operation speed of negative capacitance FET with ferroelectric HfO<inf>2</inf>

Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang et al. · 2016 · 82 citations

Engineering, Electrical Engineering, Circuit Theory +15

Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO<sub>2</sub> Capacitor

Kyungmin Jang, Nozomu Ueyama, Masaharu Kobayashi et al. · IEEE Journal of the Electron Devices Society · 2018 · 44 citations · Full text

Engineering, Electrical Engineering, Physics +17

Experimental Demonstration of a Nonvolatile SRAM With Ferroelectric HfO<sub>2</sub> Capacitor for Normally Off Application

Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang et al. · IEEE Journal of the Electron Devices Society · 2018 · 13 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +15

Negative capacitance as a performance booster for tunnel FET

Masaharu Kobayashi, Kyungmin Jang, Nozomu Ueyama et al. · 2016 · 11 citations

Engineering, Electrical Engineering, Materials Science +16

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