Concepedia

Nozomu Ueyama

NU

Statistics

Publications

6

Citations

275

H-Index

6

Active since

2016

Affiliations

The University of Tokyo(Current)

Nozomu Ueyama is an author at The University of Tokyo specializing in applied physics, engineering, and electrical engineering.

Top concepts

EngineeringApplied PhysicsMicroelectronicsElectrical EngineeringDevice ModelingNanoelectronicsComputer EngineeringLow-power ElectronicsElectronic EngineeringFerroelectric Materials

Publications per year

2016–2018

6

Publications

6

Negative Capacitance for Boosting Tunnel FET performance

Masaharu Kobayashi, Kyungmin Jang, Nozomu Ueyama et al. · IEEE Transactions on Nanotechnology · 2017 · 116 citations

Device Modeling, Electrical Engineering, Engineering +10

Experimental study on polarization-limited operation speed of negative capacitance FET with ferroelectric HfO<inf>2</inf>

Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang et al. · 2016 · 82 citations

Device Modeling, Negative Capacitance Fet, Electrical Engineering +10

Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO<sub>2</sub> Capacitor

Kyungmin Jang, Nozomu Ueyama, Masaharu Kobayashi et al. · IEEE Journal of the Electron Devices Society · 2018 · 42 citations · Full text

Device Modeling, Simulation Model, Electrical Engineering +10

Experimental Demonstration of a Nonvolatile SRAM With Ferroelectric HfO<sub>2</sub> Capacitor for Normally Off Application

Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang et al. · IEEE Journal of the Electron Devices Society · 2018 · 13 citations · Full text

Non-volatile Memory, Engineering, Emerging Memory Technology +17

Negative capacitance as a performance booster for tunnel FET

Masaharu Kobayashi, Kyungmin Jang, Nozomu Ueyama et al. · 2016 · 11 citations

Device Modeling, Electrical Engineering, Engineering +14

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