Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO₂ Capacitor

Abstract

We have experimentally observed the negative-capacitance transient effect in a ferroelectric HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (FE-HZO) capacitor and developed an equivalent circuit model based on the Landau- Khalatnikov (LK) theory. By considering multiple domains (MD) and domain interaction, an MD-LK model precisely reproduced the experimental dynamic characteristics in an FE-HZO capacitor with the various input voltage amplitude and external resistance. The MD-LK model was successfully validated as a dynamic model for FE-HZO capacitor. The MD-LK model is highly expected as a useful simulation model for the dynamic NCFET with a multi-domain FE-HZO gate insulator.