O. Shigiltchoff

Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC

S.G. Sridhara, Song Bai, O. Shigiltchoff et al. · Materials science forum · 2000 · 25 citations

Semiconductor Technology, Electrical Engineering, Engineering +12

Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission

O. Shigiltchoff, Song Bai, Robert P. Devaty et al. · Materials science forum · 2003 · 21 citations

Materials Engineering, Materials Science, Semiconductor Technology +5

Spectroscopic study of V doped Hg0.018Cd0.981Mn0.001Te bulk crystals as near-infrared materials for optical applications

Yu. P. Gnatenko, P.M. Bukivskij, Yu. P. Piryatinskiĭ et al. · Applied Physics Letters · 2009 · 20 citations

Optical Materials, Engineering, Near-infrared Materials +21

Oxygen in silicon carbide: shallow donors and deep acceptors

T. Dalibor, Hubert Trageser, Gerhard Pensl et al. · Materials Science and Engineering B · 1999 · 20 citations

Chemical Engineering, Engineering, Oxidation Resistance +3

Energy structure and micromechanism of photo‐electromotive force effect in V‐doped CdTe crystals

Yu. P. Gnatenko, M. S. Brodyn, I. O. Faryna et al. · physica status solidi (a) · 2007 · 18 citations

Deep Impurity Centers, Photo‐electromotive Force Effect, V Crystals +23