L. Wu

Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes

L. C. Le, D. G. Zhao, Desheng Jiang et al. · Applied Physics Letters · 2012 · 62 citations

Wide-bandgap Semiconductor, Engineering, Quantum Well +18

Fabrication and characterisation of NiO/ZnO structures

J.M. Nel, F.D. Auret, L. Wu et al. · Sensors and Actuators B Chemical · 2004 · 60 citations

Materials Engineering, Materials Science, Engineering +4

Electrical characterization of growth-induced defects in bulk-grown ZnO

F.D. Auret, J.M. Nel, M. Hayes et al. · Superlattices and Microstructures · 2005 · 45 citations

Electrical Engineering, Engineering, Oxide Electronics +4

Electrical characterisation of hole traps in n-type GaN

F.D. Auret, W.E. Meyer, L. Wu et al. · physica status solidi (a) · 2004 · 31 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

Electrical defects introduced during high-temperature irradiation of GaN and AlGaN

M. Hayes, F.D. Auret, L. Wu et al. · Physica B Condensed Matter · 2003 · 28 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +5