B. P. Segner

Defect mechanisms in degradation of 1.3-μm wavelength channeled-substrate buried heterostructure lasers

S. N. G. Chu, S. Nakahara, M. E. Twigg et al. · Journal of Applied Physics · 1988 · 48 citations

Optical Materials, Engineering, Laser Applications +21

Regrowth of Semi‐Insulating InP around Etched Mesas Using Hydride Vapor Phase Epitaxy

R. F. Karlicek, B. P. Segner, J. D. Wynn et al. · Journal of The Electrochemical Society · 1990 · 22 citations

Materials Science, Materials Engineering, Engineering +10

Effect of mesa shape on the planarity of InP regrowths performed by atmospheric pressure and low pressure selective metalorganic vapor phase epitaxy

J. L. Zilko, B. P. Segner, U. K. Chakrabarti et al. · Journal of Crystal Growth · 1991 · 21 citations

Materials Engineering, Materials Science, Inp Regrowths +5

1.5 μm InP/GaInAsP linear laser array with twelve individually addressable elements

L. A. Koszi, B. P. Segner, H. Temkin et al. · Electronics Letters · 1988 · 10 citations

Optical Materials, Engineering, Laser Science +23