G. Borionetti

The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon

S. Pizzini, M. Guzzi, E. Grilli et al. · Journal of Physics Condensed Matter · 2000 · 58 citations

Infrared response of oxygen precipitates in silicon: Experimental and simulated spectra

A. Sassella, A. Borghesi, P. Geranzani et al. · Applied Physics Letters · 1999 · 34 citations

Simulated Spectra, Engineering, Infrared Response +16

Atomic force microscopy: a powerful tool for surface defect and morphology inspection in semiconductor industry

G. Borionetti, A. Bazzali, R. Orizio · The European Physical Journal Applied Physics · 2004 · 29 citations

Atomic Force Microscopy, Engineering, Microscopy +19

The Origin of Photoluminescence from Oxygen Precipitates Nucleated at Low Temperature in Semiconductor Silicon

E. Leoni, Lucio Martinelli, S. Binetti et al. · Journal of The Electrochemical Society · 2004 · 15 citations

Oxygen precipitate precursors and size thresholds for the preferential nucleation for copper and nickel precipitation in silicon: the detection of copper and nickel contamination by minority carrier lifetime methods

A. Bazzali, G. Borionetti, R. Orizio et al. · Materials Science and Engineering B · 1996 · 14 citations

Nickel Contamination, Oxygen Precipitate Precursors, Size Thresholds +10