T. V. Nordstrom

The Effects of Test Conditions on MOS Radiation-Hardness Results

P. V. Dressendorfer, J.M. Soden, J. J. Harrington et al. · IEEE Transactions on Nuclear Science · 1981 · 76 citations · Full text

Materials Engineering, Electrical Engineering, Engineering +14

On stress relaxation experiments

R. W. Rohde, T. V. Nordstrom · Scripta Metallurgica · 1973 · 46 citations

Engineering, Mechanics, Stress +8

The stacking fault energy of some copper silicon alloys

T. V. Nordstrom, C. R. Barrett · Acta Metallurgica · 1969 · 41 citations

Materials Engineering, Defect Tolerance, Engineering +8

Stress relaxation of a copper-1.87 wt. % beryllium alloy

R. W. Rohde, T. V. Nordstrom · Materials Science and Engineering · 1973 · 25 citations

Materials Science, Engineering, Severe Plastic Deformation +5

The Effect of Gate Oxide Thickness on the Radiation Hardness of Silicon-Gate CMOS

T. V. Nordstrom, C. F. Gibbon · IEEE Transactions on Nuclear Science · 1981 · 17 citations

Electrical Engineering, Silicon-gate Cmos, Engineering +15