Mohamed Boutchich

Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure

Haikel Sediri, Debora Pierucci, Mahdi Hajlaoui et al. · Scientific Reports · 2015 · 73 citations · Full text

A Self‐Aligned High‐Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering

Kuan‐I Ho, Mohamed Boutchich, Ching‐Yuan Su et al. · Advanced Materials · 2015 · 52 citations

Graphene Nanomeshes, Electrical Engineering, Graphene Quantum Dot +14

Young's modulus measurement of thin-film materials using micro-cantilevers

G.J. McShane, Mohamed Boutchich, A. Srikantha Phani et al. · Journal of Micromechanics and Microengineering · 2006 · 39 citations

Materials Science, Engineering, Micromechanics +14

Atmospheric pressure route to epitaxial nitrogen-doped trilayer graphene on 4H-SiC (0001) substrate

Mohamed Boutchich, Hakim Arezki, David Alamarguy et al. · Applied Physics Letters · 2014 · 34 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Characterization of phosphorus and boron heavily doped LPCVD polysilicon films in the temperature range 293-373 K

Mohamed Boutchich, Katir Ziouche, P. Godts et al. · IEEE Electron Device Letters · 2002 · 32 citations

Characterization Benches, Engineering, Thin Film Process Technology +16