A Self‐Aligned High‐Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering

Abstract

The conduction channel of a graphene field-effect transistor (FET) is decoupled from the parasitic charge impurities of the underlying substrate. Fluorographene as a passivation layer is fabricated between the oxide substrate and channel, and a self-aligned gate-terminated FET is also fabricated. This approach significantly reduces the scattering and, as a result, the mobility increases ten fold.