Po‐Yi Kuo

The Impact of Deep Ni Salicidation and$hboxNH_3$Plasma Treatment on Nano-SOI FinFETs

H.-C. You, Po‐Yi Kuo, Fu‐Hsiang Ko et al. · IEEE Electron Device Letters · 2006 · 52 citations

Engineering, Nano-soi Finfets, Integrated Circuits +17

Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer

Dun‐Bao Ruan, Po‐Tsun Liu, Yu‐Chuan Chiu et al. · RSC Advances · 2018 · 34 citations · Full text

Experimental Demonstration of Stacked Gate- All-Around Poly-Si Nanowires Negative Capacitance FETs With Internal Gate Featuring Seed Layer and Free of Post-Metal Annealing Process

Shen‐Yang Lee, Hanwei Chen, Chiuan-Huei Shen et al. · IEEE Electron Device Letters · 2019 · 33 citations

Engineering, Field-effect Transistors, Semiconductor Materials +19

Effect of Seed Layer on Gate-All-Around Poly-Si Nanowire Negative-Capacitance FETs With MFMIS and MFIS Structures: Planar Capacitors to 3-D FETs

Shen‐Yang Lee, Hanwei Chen, Chiuan-Huei Shen et al. · IEEE Transactions on Electron Devices · 2020 · 30 citations

Planar Capacitors, Magnetic Properties, Engineering +16

High-Performance GAA Sidewall-Damascened Sub-10-nm In Situ n⁺-Doped Poly-Si NWs Channels Junctionless FETs

Po‐Yi Kuo, Yi‐Hsien Lu, Tien−Sheng Chao · IEEE Transactions on Electron Devices · 2014 · 26 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12