Xiaoliang Zhou

Oxygen Interstitial Creation in a-IGZO Thin-Film Transistors Under Positive Gate-Bias Stress

Xiaoliang Zhou, Letao Zhang, Huiling Lü et al. · IEEE Electron Device Letters · 2017 · 81 citations

Engineering, Electrical Engineering, Materials Science +17

Metal Reaction-Induced Bulk-Doping Effect in Forming Conductive Source-Drain Regions of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors

Huan Yang, Xiaoliang Zhou, Haishi Fu et al. · ACS Applied Materials & Interfaces · 2021 · 54 citations

Engineering, Electrical Engineering, Materials Science +17

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor

Xiang Xiao, Letao Zhang, Xiaoliang Zhou et al. · ACS Applied Materials & Interfaces · 2017 · 51 citations

Engineering, Electrical Engineering, Materials Science +17

Near-Ideal Top-Gate Controllability of InGaZnO Thin-Film Transistors by Suppressing Interface Defects with an Ultrathin Atomic Layer Deposited Gate Insulator

Jiye Li, Yuqing Zhang, Jialiang Wang et al. · ACS Applied Materials & Interfaces · 2023 · 42 citations

Engineering, Electrical Engineering, Materials Engineering +17

Oxide Thin-Film Transistors With IMO and IGZO Stacked Active Layers for UV Detection

Huiling Lü, Xiaoliang Zhou, Ting Liang et al. · IEEE Journal of the Electron Devices Society · 2017 · 38 citations · Full text

Engineering, Electrical Engineering, Materials Science +17