William Cheng-Yu

Subthreshold Swing Saturation of Nanoscale MOSFETs Due to Source-to-Drain Tunneling at Cryogenic Temperatures

Kuo-Hsing Kao, Tzung Rang Wu, Chen Hong-lin et al. · IEEE Electron Device Letters · 2020 · 45 citations

Electrical Engineering, Source-to-drain Tunneling, Engineering +15

First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications

Shu-Wei Chang, Tsung-Han Lu, Cong-Yi Yang et al. · IEEE Transactions on Electron Devices · 2022 · 45 citations

Engineering, Vlsi Design, Integrated Circuits +20

Performance Improvement of Poly-Si Tunnel FETs by Trap Density Reduction

William Cheng-Yu, Yi‐Hsuan Chen · IEEE Transactions on Electron Devices · 2015 · 20 citations

Semiconductors, Trap-assisted Tunneling, Electrical Engineering +12

Current Degradation by Carrier Recombination in a Poly-Si TFET With Gate-Drain Underlapping

William Cheng-Yu · IEEE Transactions on Electron Devices · 2017 · 16 citations

Electrical Engineering, Poly-si Tfet, Engineering +12

Impact of Crystallization Method on Poly-Si Tunnel FETs

Yi-Hsuan Chen, William Cheng-Yu, Jer-Yi Lin et al. · IEEE Electron Device Letters · 2015 · 14 citations

Engineering, Integrated Circuits, Silicon On Insulator +17