R.B. Hulfachor

A 1.16-V 5.8-to-13.5-ppm/°C Curvature-Compensated CMOS Bandgap Reference Circuit With a Shared Offset-Cancellation Method for Internal Amplifiers

Keng Chen, Luca Petruzzi, R.B. Hulfachor et al. · IEEE Journal of Solid-State Circuits · 2020 · 135 citations

Bandgap Reference Circuit, Electrical Engineering, Bandgap Reference +7

Ensemble Monte Carlo study of interface-state generation in low-voltage scaled silicon MOS devices

John Ellis-Monaghan, R.B. Hulfachor, K. W. Kim et al. · IEEE Transactions on Electron Devices · 1996 · 19 citations

Device Modeling, Electrical Engineering, Semiconductor Device +11

An evaluation of super-steep-retrograde channel doping for deep-submicron MOSFET applications

Huajun Tian, R.B. Hulfachor, John Ellis-Monaghan et al. · IEEE Transactions on Electron Devices · 1994 · 14 citations

Semiconductors, Device Modeling, Electrical Engineering +12

Scaling trends for device performance and reliability in channel-engineered n-MOSFETs

S.C. Williams, R.B. Hulfachor, K. W. Kim et al. · IEEE Transactions on Electron Devices · 1998 · 12 citations

Engineering, Vlsi Design, Channel-engineered Mosfets +17

Buck Circuit Design With Pseudo-Constant Frequency and Constant On-Time for High Current Point-of-Load Regulation

Keng Chen, James E. Garrett, Peng Kang et al. · IEEE Transactions on Circuits and Systems I Regular Papers · 2021 · 12 citations

Electrical Engineering, Phase Error, Vlsi Design +13