IEEE Transactions on Electron Devices · 1994 · 14 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ModelingDevice SimulationDopingSemiconductor PhysicsSemiconductor ReliabilityChannel DopingChannel Doping EffectsDoping Effects On Device PerformanceDrift-diffusion ModelingDrift-diffusion SimulationInterface State ModelingPerformance DegradationThreshold Voltage
Performance and reliability of deep-submicron MOSFET's employing super-steep-retrograde (SSR) channel doping configurations are examined using self-consistent Monte Carlo and drift-diffusion simulations. It is found that SSR channel doped MOSFET's provide increased current drive and reduced threshold voltage shift when compared with conventional MOSFET structures. However, they also display a relatively higher substrate current and interface state generation rate. The physical mechanisms of performance enhancement/degradation and design tradeoffs for SSR channel doped MOSFET's are discussed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Non-local impact ionization in silicon devices
J.W. Slotboom, G. Streutker, M.J. van Dort et al. · 2002 · 105 citations
Engineering, Electrical Engineering, Electronic Materials +16
Room temperature 0.1 μm CMOS technology with 11.8 ps gate delay
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