An evaluation of super-steep-retrograde channel doping for deep-submicron MOSFET applications

Abstract

Performance and reliability of deep-submicron MOSFET's employing super-steep-retrograde (SSR) channel doping configurations are examined using self-consistent Monte Carlo and drift-diffusion simulations. It is found that SSR channel doped MOSFET's provide increased current drive and reduced threshold voltage shift when compared with conventional MOSFET structures. However, they also display a relatively higher substrate current and interface state generation rate. The physical mechanisms of performance enhancement/degradation and design tradeoffs for SSR channel doped MOSFET's are discussed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>