Robert Hoelzl

Gettering of Copper and Nickel in p/p+ Epitaxial Wafers

Robert Hoelzl, D. Huber, K.‐J. RANGE et al. · Journal of The Electrochemical Society · 2000 · 32 citations · Full text

Materials Engineering, Materials Science, Wafer Scale Processing +14

The optimal amount of isotopic spike solution for ultratrace analysis by isotope dilution mass spectrometry

Robert Hoelzl, Christian Hoelzl, L. Kotz et al. · Accreditation and Quality Assurance · 1998 · 30 citations

Isotope Analysis, Analytical Instrumentation, Isotope Geochemistry +11

Silicon crystals for future requirements of 300mm wafers

E. Dornberger, J. Virbulis, B. Hanna et al. · Journal of Crystal Growth · 2001 · 20 citations

Materials Engineering, Materials Science, Wafer Scale Processing +6

Gettering efficiencies of polysilicon-, stacking fault- and He-implanted backsides for Cu and Ni

Robert Hoelzl, K.‐J. RANGE, L. Fabry et al. · Materials Science and Engineering B · 2000 · 20 citations

Materials Engineering, Materials Science, He-implanted Backsides +9

Modeling of Cu gettering in p- and n-type silicon and in poly-silicon

Robert Hoelzl, K.‐J. RANGE, L. Fabry · Applied Physics A · 2002 · 20 citations

Materials Science, Materials Engineering, Sintering +9