L. Stauffer - Concepedia

Author

L. Stauffer

Also Known As

L STAUFFER, L Stauffer, L. H. STAUFFER, L. H. Stauffer, L. STAUFFER, L. Stauffer, L.H. Stauffer, LOUISE STAUFFER, Louise Stauffer, Stauffer, L.

113

Publications

Citations

H-Index

Concepts

All Affiliations

Université de Haute-Alsace Centre National de la Recherche Scientifique Laboratoire de Photochimie et d'Ingénierie Macromoléculaire Université Paris-Sud Laboratoire de Chimie Théorique

About

L. Stauffer is an author at Université de Haute-Alsace specializing in applied physics, engineering, and chemistry.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	27	610
2	Applied Physics	17	24	563
3	Natural Sciences	13	14	320
4	Health Sciences	1	1	20
5	Biomedical Engineering	1	1	20

L. Stauffer

Publications

629

Citations

H-Index

Page 1

	Year	Citations
Electronic structure and interfacial geometry of epitaxial two-dimensional Er silicide on Si(111) L. Stauffer, A. Mharchi, C. Pirri, Physical review. B, Condensed matter Materials ScienceEngineeringCrystalline DefectsPhysicsInterfacial Geometry	1993	68
Mastering the Molecular Dynamics of a Bistable Molecule by Single Atom Manipulation María Ángeles Martín, M. Lastapis, Damien Riedel, Physical Review Letters EngineeringComputational ChemistryChemistrySingle Atom ManipulationMolecular Dynamics	2006	51
Electronic properties of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-doped hydrogenated silicon (100) surface and dehydrogenated structures at 5 K Amandine Bellec, Damien Riedel, Gérald Dujardin, Physical Review B EngineeringElectronic PropertiesChemistryDehydrogenated StructuresSilicon On Insulator	2009	39
Reversible charge storage in a single silicon atom Amandine Bellec, Laurent Chaput, Gérald Dujardin, Physical Review B EngineeringUltimate MiniaturizationSilicon On InsulatorCharge TransportElectronic Devices	2013	34
Non-equivalence of the adatoms in the das model of the Si(111) 7x7 surface, an extended Hückel model calculation L. Stauffer, S. Van, D. Bolmont, Solid State Communications Das ModelSurface CharacterizationEngineeringPhysicsNatural Sciences	1993	30
Energetics of surface and subsurface carbon incorporation in Si(100) Ph. Sonnet, L. Stauffer, Annabella Selloni, Physical review. B, Condensed matter EngineeringCarbon IncorporationChemistrySilicon On InsulatorCarbon Penetration	2000	27
Anchoring phthalocyanine molecules on the 6H-SiC(0001)3×3 surface Guillaume Baffou, Andrew J. Mayne, G. Comtet, Applied Physics Letters SemiconductorsSurface CharacterizationElectronic DevicesEngineeringElectronic Materials	2007	26
Adsorption and diffusion mechanisms of Pb on Si(111)-(7 × 7) in the initial stages of Pb chemisorption Ph. Sonnet, L. Stauffer, Christian Minot Surface Science Chemical EngineeringDiffusion MechanismsEngineeringSurface ChemistrySurface Science	1998	25
STM imaging, spectroscopy and manipulation of a self-assembled PTCDI monolayer on epitaxial graphene H. Yang, Andrew J. Mayne, G. Comtet, Physical Chemistry Chemical Physics EngineeringMolecular SamChemistryOrdered Self-assembled MonolayerSelf-assembled Ptcdi Monolayer	2013	25
<i>Ab initio</i>study of biphenyl chemisorption on Si(001): Configurational stability Mikhaïl Mamatkulov, L. Stauffer, Christian Minot, Physical Review B Inorganic ChemistryEngineeringSurface ChemistryNatural SciencesApplied Physics	2006	25

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