L. Stauffer

Electronic structure and interfacial geometry of epitaxial two-dimensional Er silicide on Si(111)

L. Stauffer, A. Mharchi, C. Pirri et al. · Physical review. B, Condensed matter · 1993 · 68 citations

Materials Science, Engineering, Crystalline Defects +12

Mastering the Molecular Dynamics of a Bistable Molecule by Single Atom Manipulation

María Ángeles Martín, M. Lastapis, Damien Riedel et al. · Physical Review Letters · 2006 · 51 citations

Engineering, Computational Chemistry, Chemistry +21

Electronic properties of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-doped hydrogenated silicon (100) surface and dehydrogenated structures at 5 K

Amandine Bellec, Damien Riedel, Gérald Dujardin et al. · Physical Review B · 2009 · 39 citations

Engineering, Electronic Properties, Chemistry +21

Reversible charge storage in a single silicon atom

Amandine Bellec, Laurent Chaput, Gérald Dujardin et al. · Physical Review B · 2013 · 34 citations

Engineering, Ultimate Miniaturization, Silicon On Insulator +17

Non-equivalence of the adatoms in the das model of the Si(111) 7x7 surface, an extended Hückel model calculation

L. Stauffer, S. Van, D. Bolmont et al. · Solid State Communications · 1993 · 30 citations

Das Model, Surface Characterization, Engineering +9