Electronic properties of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-doped hydrogenated silicon (100) surface and dehydrogenated structures at 5 K

Abstract

We present a comparative study of the electronic properties of the clean Si(100) and the hydrogenated Si(100):H surfaces performed with a low-temperature (5 K) scanning tunneling microscope. Various surface structures such as single silicon dangling bonds and bare silicon dimers created by local desorption of hydrogen atoms from the Si(100):H surface are also investigated. The experimental scanning tunneling spectroscopy (STS) curves acquired locally on each of these structures are compared with STS measurements performed on the Si(100) and Si(100):H surfaces. First principle density-functional theory calculations of the projected local density of states, taking into account the influence of the dopant atoms (As), enable to assign the observed STS spectra.