S. Chetlur

On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing

Zhi Chen, K. Hess, Jinju Lee et al. · IEEE Electron Device Letters · 2000 · 93 citations

Hot Carrier, Electrical Engineering, Engineering +13

Improvement of hot carrier reliability with deuterium anneals for manufacturing multilevel metal/dielectric MOS systems

I.C. Kizilyalli, G. C. Abeln, Zhelin Chen et al. · IEEE Electron Device Letters · 1998 · 26 citations

Deuterium Post-metal Anneals, Engineering, Vlsi Design +18

Direct evidence of multiple vibrational excitation for the Si–H/D bond breaking in metal–oxide–semiconductor transistors

Zhi Chen, Pangling Ong, Alicia Kay Mylin et al. · Applied Physics Letters · 2002 · 16 citations

Semiconductors, Semiconductor Technology, Electronic Devices +13

An improved substrate current model for deep submicron MOSFETs

Wei Li, J.S. Yuan, S. Chetlur et al. · Solid-State Electronics · 2000 · 12 citations

Device Modeling, Electrical Engineering, Engineering +7