Padmaja Nagaiah

Improvement of the GaSb/Al2O3 interface using a thin InAs surface layer

Andrew Greene, Shailesh Madisetti, Padmaja Nagaiah et al. · Solid-State Electronics · 2012 · 34 citations

Materials Science, Surface Characterization, Aluminium Nitride +6

AlGaAsSb superlattice buffer layer for p-channel GaSb quantum well on GaAs substrate

Vadim Tokranov, Padmaja Nagaiah, Michail M. Yakimov et al. · Journal of Crystal Growth · 2011 · 23 citations

Wide-bandgap Semiconductor, Engineering, P-channel Gasb Quantum +5

Mobility and remote scattering in buried InGaAs quantum well channels with high-k gate oxide

Padmaja Nagaiah, Vadim Tokranov, Michail M. Yakimov et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2010 · 18 citations

Semiconductors, Quantum Science, In0.53ga0.47as/hfo2 Interface +14

Quantification of interfacial state density (Dit) at the high-k/III-V interface based on Hall effect measurements

Dmitry Veksler, Padmaja Nagaiah, Thenappan Chidambaram et al. · Journal of Applied Physics · 2012 · 15 citations

Engineering, High Mobility Substrates, Hall Concentration +16

All in-situ GaSb MOS structures on GaAs (001): Growth, passivation and high-k oxides

Vadim Tokranov, Shailesh Madisetti, Michail M. Yakimov et al. · Journal of Crystal Growth · 2013 · 13 citations

In-situ Gasb Mos, Electrical Engineering, Engineering +4